Publication:

Electrical properties of SiGe epitaxial layers for photovoltaic application as studied by scanning electron microscopical methods

Date

1998
Proceedings Paper
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dc.contributor.authorKruger, O.
dc.contributor.authorSeifert, W.
dc.contributor.authorKittler, M.
dc.contributor.authorGutjahr, A.
dc.contributor.authorKonuma, M.
dc.contributor.authorSaid, Khalid
dc.contributor.authorPoortmans, Jef
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-09-30T12:24:23Z
dc.date.available2021-09-30T12:24:23Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2682
dc.source.beginpage509
dc.source.conferenceBeam Injection Assessment of Defects in Semiconductors - BIADS. Proceeding of the 5th International Workshop
dc.source.conferencedate30/08/1998
dc.source.conferencelocationSchloss Wulkow Germany
dc.source.endpage518
dc.title

Electrical properties of SiGe epitaxial layers for photovoltaic application as studied by scanning electron microscopical methods

dc.typeProceedings paper
dspace.entity.typePublication
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