640 mV open-circuit voltage multicrystalline silicon solar cells: role of base doping on device parameters

dc.contributor.author	El Gamel, Hussam
dc.contributor.author	Sivoththaman, Sivanarayanamoorthy
dc.contributor.author	Ghannam, Moustafa
dc.contributor.author	Nijs, Johan
dc.contributor.author	Mertens, Robert
dc.contributor.author	Rodot, M.
dc.contributor.author	Sarti, D.
dc.contributor.author	Le, Quoc Toan
dc.contributor.imecauthor	Ghannam, Moustafa
dc.contributor.imecauthor	Mertens, Robert
dc.contributor.imecauthor	Le, Quoc Toan
dc.contributor.orcidimec	Le, Quoc Toan::0000-0002-0206-6279
dc.date.accessioned	2021-09-29T13:06:12Z
dc.date.available	2021-09-29T13:06:12Z
dc.date.embargo	9999-12-31
dc.date.issued	1995
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/640
dc.source.beginpage	99
dc.source.endpage	105
dc.source.journal	Solar Energy Materials and Solar Cells
dc.source.volume	36
dc.title	640 mV open-circuit voltage multicrystalline silicon solar cells: role of base doping on device parameters
dc.type	Journal article
dspace.entity.type	Publication
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