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Measurement technique, oxide thickness and area dependence of soft breakdown

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dc.contributor.authorNigam, Tanya
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-10-14T13:28:34Z
dc.date.available2021-10-14T13:28:34Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4623
dc.source.beginpage337
dc.source.conferenceStructural and Electronic Properties of Ultrathin Dielectrics on Silicon and Related Structures; November 1999; Boston, MA, USA.
dc.source.conferencelocation
dc.source.endpage343
dc.title

Measurement technique, oxide thickness and area dependence of soft breakdown

dc.typeProceedings paper
dspace.entity.typePublication
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