Publication:

Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal

Date

2011
Journal article
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dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDas, Jo
dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorMarcon, Denis
dc.contributor.authorLenci, Silvia
dc.contributor.authorGeens, Karen
dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-19T19:10:08Z
dc.date.available2021-10-19T19:10:08Z
dc.date.issued2011
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19824
dc.source.beginpage30
dc.source.endpage32
dc.source.issue1
dc.source.journalIEEE Electron Device Letters
dc.source.volume32
dc.title

Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal

dc.typeJournal article
dspace.entity.typePublication
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