Publication:

Integration of III/V hetero-structures by selective area growth on Si for nano- and optoelectronics

Date

2016
Proceedings Paper
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dc.contributor.authorKunert, Bernardette
dc.contributor.authorGuo, Weiming
dc.contributor.authorMols, Yves
dc.contributor.authorLanger, Robert
dc.contributor.authorBarla, Kathy
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorBarla, Kathy
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.date.accessioned2021-10-23T11:57:33Z
dc.date.available2021-10-23T11:57:33Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26860
dc.identifier.urlhttp://ecst.ecsdl.org/content/75/8/409.abstract
dc.source.beginpage409
dc.source.conferenceSiGe, Ge, and Related Materials: Materials, Processing, and Devices 7
dc.source.conferencedate2/10/2016
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage419
dc.title

Integration of III/V hetero-structures by selective area growth on Si for nano- and optoelectronics

dc.typeProceedings paper
dspace.entity.typePublication
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