Publication:

Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study

Date

2023-05-31
Journal article
https://doi.org/10.1038/s41699-023-00402-3
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dc.contributor.authorDuflou, Rutger
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHoussa, Michel
dc.contributor.authorAfzalian, Aryan
dc.contributor.imecauthorDuflou, Rutger
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorAfzalian, Aryan
dc.contributor.orcidimecDuflou, Rutger::0000-0002-0357-1293
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecAfzalian, Aryan::0000-0002-5260-0281
dc.date.accessioned2023-07-12T16:03:36Z
dc.date.available2023-06-10T20:06:20Z
dc.date.available2023-06-14T12:15:10Z
dc.date.available2023-07-12T16:03:36Z
dc.date.embargo2023-05-31
dc.date.issued2023-05-31
dc.description.wosFundingTextAcknowledgementsThis research was funded by the FWO as part of the PhD fellowship 1100321N. A.A. thanks Dr. Gouri Sankar Kar and Dr. Cesar Javier Lockhart de la Rosa for management support. R.D. acknowledges the support of Michiel van Setten, Sergiu Clima, Christopher Pashartis, Kiroubanand Sankaran, Albert de Jamblinne de Meux, and Benoit Van Troeye related to advice on the DFT simulations and the use of their simulation scheduler toolkit.
dc.identifier.doi10.1038/s41699-023-00402-3
dc.identifier.issn2397-7132
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41704
dc.publisherNATURE PORTFOLIO
dc.source.beginpage1
dc.source.endpage13
dc.source.issue1
dc.source.journalNPJ 2D MATERIALS AND APPLICATIONS
dc.source.numberofpages13
dc.source.volume7
dc.subject.disciplineMaterials science
dc.title

Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study

dc.typeJournal article
dspace.entity.typePublication
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