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Nanoscale electrical characterization of CuTCNQ layers by conductive AFM in view of their use as resistive random access memory (RRAM)

Date

2009
Presentation
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dc.contributor.authorDeleruyelle, Damien
dc.contributor.authorThomas, Maryline
dc.contributor.authorMuller, Christophe
dc.contributor.authorMuller, Robert
dc.contributor.authorGoux, Ludovic
dc.contributor.authorWouters, Dirk
dc.contributor.authorKever, Thorsten
dc.contributor.authorBoettger, Ulrich
dc.contributor.authorWaser, Rainer
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-17T21:55:03Z
dc.date.available2021-10-17T21:55:03Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15218
dc.source.conferenceE-MRS Spring Meeting Symposium G: Fundamentals and Technology of Multifunctional Oxide Thin Films
dc.source.conferencedate8/06/2009
dc.source.conferencelocationStrasbourg France
dc.title

Nanoscale electrical characterization of CuTCNQ layers by conductive AFM in view of their use as resistive random access memory (RRAM)

dc.typeOral presentation
dspace.entity.typePublication
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