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Size effect on Raman measured stress and strain induced phonon shifts in ultra-thin silicon film

Date

2025-JAN 13
Journal article
https://doi.org/10.1063/5.0240392
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dc.contributor.authorPashartis, C.
dc.contributor.authorvan Setten, M. J.
dc.contributor.authorPourtois, G.
dc.contributor.imecauthorPashartis, C.
dc.contributor.imecauthorvan Setten, M. J.
dc.contributor.imecauthorPourtois, G.
dc.date.accessioned2025-01-26T18:36:02Z
dc.date.available2025-01-26T18:36:02Z
dc.date.issued2025-JAN 13
dc.identifier.doi10.1063/5.0240392
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45121
dc.publisherAIP Publishing
dc.source.issue2
dc.source.journalAPPLIED PHYSICS LETTERS
dc.source.numberofpages5
dc.source.volume126
dc.subject.keywordsSPECTROSCOPY
dc.title

Size effect on Raman measured stress and strain induced phonon shifts in ultra-thin silicon film

dc.typeJournal article
dspace.entity.typePublication
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