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Influence of the Ge concentration on the threshold voltage and subthreshold slope of nanoscale vertical Si/SiGe pMOSFETs

Date

1998
Proceedings Paper
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dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-09-30T11:35:44Z
dc.date.available2021-09-30T11:35:44Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2457
dc.source.beginpage235
dc.source.conferenceSimulation of Semiconductor Processes and Devices 1998 - SISPAD 98
dc.source.conferencedate2/09/1998
dc.source.conferencelocationLeuven Belgium
dc.source.endpage238
dc.title

Influence of the Ge concentration on the threshold voltage and subthreshold slope of nanoscale vertical Si/SiGe pMOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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