Publication:

Multi-step trap-assisted tunneling in Al-doped HfO<sub>2</sub> used in advanced 2.5D metal-insulator-metal capacitors

Date

2025-AUG 21
Journal article
https://doi.org/10.1063/5.0277092
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dc.contributor.authorFohn, C.
dc.contributor.authorChery, E.
dc.contributor.authorCroes, K.
dc.contributor.authorStucchi, M.
dc.contributor.authorAfanas'ev, V.
dc.contributor.imecauthorFohn, C.
dc.contributor.imecauthorChery, E.
dc.contributor.imecauthorCroes, K.
dc.contributor.imecauthorStucchi, M.
dc.contributor.imecauthorAfanas'ev, V.
dc.date.accessioned2025-09-01T04:07:35Z
dc.date.available2025-09-01T04:07:35Z
dc.date.issued2025-AUG 21
dc.identifier.doi10.1063/5.0277092
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/46139
dc.publisherAIP Publishing
dc.source.issue7
dc.source.journalJOURNAL OF APPLIED PHYSICS
dc.source.numberofpages10
dc.source.volume138
dc.subject.keywordsLEAKAGE CURRENT
dc.subject.keywordsCONDUCTION
dc.subject.keywordsMECHANISM
dc.subject.keywordsRELIABILITY
dc.subject.keywordsOXIDES
dc.subject.keywordsMOS
dc.title

Multi-step trap-assisted tunneling in Al-doped HfO2 used in advanced 2.5D metal-insulator-metal capacitors

dc.typeJournal article
dspace.entity.typePublication
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