Publication:

Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility

Date

 
dc.contributor.authorDriussi, F.
dc.contributor.authorEsseni, D.
dc.contributor.authorSelmi, L.
dc.contributor.authorSchmidt, M.
dc.contributor.authorLemme, M.
dc.contributor.authorKurz, H.
dc.contributor.authorBuca, D.
dc.contributor.authorMantl, S.
dc.contributor.authorLuysberg, M.
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.contributor.authorReiche, M.
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T15:56:10Z
dc.date.available2021-10-16T15:56:10Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12100
dc.source.beginpage315
dc.source.conferenceProceedings of the 37th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate11/09/2007
dc.source.conferencelocationMünchen Germany
dc.source.endpage318
dc.title

Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections: