Publication:

Conduction mechanism in amorphous InGaZnO thin film transistors

Date

2016
Journal article
https://doi.org/10.7567/JJAP.55.014301
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dc.contributor.authorBhoolokam, Ajay
dc.contributor.authorNag, Manoj
dc.contributor.authorSteudel, Soeren
dc.contributor.authorGenoe, Jan
dc.contributor.authorGelinck, Gerwin
dc.contributor.authorKadashchuk, Andriy
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeremans, Paul
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorKadashchuk, Andriy
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.accessioned2021-10-23T10:07:21Z
dc.date.available2021-10-23T10:07:21Z
dc.date.issued2016
dc.identifier.doi10.7567/JJAP.55.014301
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26343
dc.identifier.urlhttp://iopscience.iop.org/article/10.7567/JJAP.55.014301
dc.source.beginpage14301
dc.source.issue1
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume55
dc.title

Conduction mechanism in amorphous InGaZnO thin film transistors

dc.typeJournal article
dspace.entity.typePublication
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