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Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy

Date

2020-09
Proceedings Paper
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dc.contributor.authorRosseel, Erik
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorTirrito, Matteo
dc.contributor.authorDouhard, Bastien
dc.contributor.authorRichard, Olivier
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorKhazaka, Rami
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorKhazaka, Rami
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-29T03:16:58Z
dc.date.available2021-10-29T03:16:58Z
dc.date.issued2020-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35857
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/09805.0037ecst/pdf
dc.source.beginpage37
dc.source.conferenceECS PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage42
dc.title

Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy

dc.typeProceedings paper
dspace.entity.typePublication
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