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A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
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A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
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Date
2020
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Gaur, Abhinav
;
Agarwal, Tarun
;
Asselberghs, Inge
;
Radu, Iuliana
;
Heyns, Marc
;
Lin, Dennis
Journal
2D Materials
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1981
since deposited on 2021-10-28
Acq. date: 2025-12-16
Citations
Metrics
Views
1981
since deposited on 2021-10-28
Acq. date: 2025-12-16
Citations