Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Articles
A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
Publication:
A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
Copy permalink
Date
2020
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Gaur, Abhinav
;
Agarwal, Tarun
;
Asselberghs, Inge
;
Radu, Iuliana
;
Heyns, Marc
;
Lin, Dennis
Journal
2D Materials
Abstract
Description
Statistics
Views
1986
since deposited on 2021-10-28
2
last month
1
last week
Acq. date: 2026-02-26
Citations
Statistics
Views
1986
since deposited on 2021-10-28
2
last month
1
last week
Acq. date: 2026-02-26
Citations