Publication:

Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

Date

2005
Journal article
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dc.contributor.authorHoussa, Michel
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T02:10:41Z
dc.date.available2021-10-16T02:10:41Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10613
dc.source.beginpage173509-1
dc.source.endpage173509-3
dc.source.issue17
dc.source.journalApplied Physics Letters
dc.source.volume86
dc.title

Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

dc.typeJournal article
dspace.entity.typePublication
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