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Ge-on-insulator fabrication based on Ge-on-nothing technology

 
dc.contributor.authorYamamoto, Keisuke
dc.contributor.authorWang, Dong
dc.contributor.authorLoo, Roger
dc.contributor.authorPorret, Clément
dc.contributor.authorCho, Jinyoun
dc.contributor.authorDessein, Kristof
dc.contributor.authorDepauw, Valerie
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDepauw, Valerie
dc.contributor.imecauthorPorret, Clément
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecDepauw, Valerie::0000-0003-2045-9698
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.date.accessioned2025-06-17T13:12:30Z
dc.date.available2024-04-09T17:57:46Z
dc.date.available2025-06-17T13:12:30Z
dc.date.issued2024
dc.description.wosFundingTextThis work was partially supported by a Grant-in-Aid for Scientific Research (No. 19H05616), JSPS-FWO Bilateral Joint Research Projects, and the Cooperative Research Project of the RIEC, Tohoku University. The development of the GeON template was carried out under a program of and funded by the European Space Agency (ESA) with contract no. 4000129924/20/NL/FE. The view expressed herein can in no way be taken to reflect the official opinion of the European Space Agency. The TEM analysis was conducted by Melco Semiconductor Engineering Corp.
dc.identifier.doi10.35848/1347-4065/ad2d07
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43807
dc.publisherIOP Publishing Ltd
dc.source.beginpageArt. 04SP32
dc.source.endpageN/A
dc.source.issue4
dc.source.journalJAPANESE JOURNAL OF APPLIED PHYSICS
dc.source.numberofpages8
dc.source.volume63
dc.subject.keywordsELECTRICAL-PROPERTIES
dc.subject.keywordsGERMANIUM
dc.subject.keywordsOPERATION
dc.subject.keywordsMOSFETS
dc.title

Ge-on-insulator fabrication based on Ge-on-nothing technology

dc.typeJournal article
dspace.entity.typePublication
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