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Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability

Date

2012
Journal article
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dc.contributor.authorPadovani, Andrea
dc.contributor.authorArreghini, Antonio
dc.contributor.authorVandelli, Luca
dc.contributor.authorLarcher, Luca
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-20T14:11:03Z
dc.date.available2021-10-20T14:11:03Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21245
dc.source.beginpage53505
dc.source.issue5
dc.source.journalApplied Physics Letters
dc.source.volume101
dc.title

Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability

dc.typeJournal article
dspace.entity.typePublication
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