Publication:

Formation of ultra-thin PtSi layers with a 2-step silicidation process

Date

1997
Journal article
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dc.contributor.authorDonaton, R. A.
dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorZagrebnov, Maxim
dc.contributor.authorBaert, Kris
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.authorLangouche, G.
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.date.accessioned2021-09-30T08:14:19Z
dc.date.available2021-09-30T08:14:19Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1868
dc.source.beginpage507
dc.source.endpage514
dc.source.journalMicroelectronic Engineering
dc.source.volume37/38
dc.title

Formation of ultra-thin PtSi layers with a 2-step silicidation process

dc.typeJournal article
dspace.entity.typePublication
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