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Hf-based high-k dielectrics for p-Ge MOS gate stacks

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dc.contributor.authorFadida, Sivan
dc.contributor.authorPalumbo, Felix
dc.contributor.authorNyns, Laura
dc.contributor.authorLin, Dennis
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorEizenberg, Moshe
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-22T01:24:41Z
dc.date.available2021-10-22T01:24:41Z
dc.date.issued2014
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23800
dc.identifier.urlhttp://scitation.aip.org/content/avs/journal/jvstb/32/3/10.1116/1.4837295
dc.source.beginpage03D105
dc.source.issue3
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.volume32
dc.title

Hf-based high-k dielectrics for p-Ge MOS gate stacks

dc.typeJournal article
dspace.entity.typePublication
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