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Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
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Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
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Date
2005
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Trojman, Lionel
;
Ragnarsson, Lars-Ake
;
Pantisano, Luigi
;
Lujan, Guilherme
;
Houssa, Michel
;
Schram, Tom
;
Schaekers, Marc
;
Van Ammel, Annemie
;
Groeseneken, Guido
;
De Gendt, Stefan
;
Heyns, Marc
Journal
Microelectronic Engineering
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1918
since deposited on 2021-10-16
Acq. date: 2026-07-16
Citations
Statistics
Views
1918
since deposited on 2021-10-16
Acq. date: 2026-07-16
Citations