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Influence of growth temperature on buffer leakage current of AlGaN/GaN/AlGaN DH-FET grown on silicon substrates

Date

2011
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dc.contributor.authorCheng, Kai
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorSijmus, Bram
dc.contributor.authorDekoster, Johan
dc.contributor.imecauthorDekoster, Johan
dc.date.accessioned2021-10-19T12:46:39Z
dc.date.available2021-10-19T12:46:39Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18673
dc.source.conference9th International Conference on Nitride Semiconductors - ICNS-9
dc.source.conferencedate10/07/2011
dc.source.conferencelocationGlasgow UK
dc.title

Influence of growth temperature on buffer leakage current of AlGaN/GaN/AlGaN DH-FET grown on silicon substrates

dc.typeOral presentation
dspace.entity.typePublication
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