Publication:

Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration

Date

2018
Journal article
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dc.contributor.authorLi, Xiangdong
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorZhao, Ming
dc.contributor.authorGeens, Karen
dc.contributor.authorGuo, Weiming
dc.contributor.authorYou, Shuzhen
dc.contributor.authorStoffels, Steve
dc.contributor.authorLempinen, Vesa-Pekka
dc.contributor.authorSormunen, Jaakko
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-25T21:58:55Z
dc.date.available2021-10-25T21:58:55Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31174
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8355807/
dc.source.beginpage999
dc.source.endpage1002
dc.source.issue7
dc.source.journalIEEE Electron Device Letters
dc.source.volume39
dc.title

Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration

dc.typeJournal article
dspace.entity.typePublication
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