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Mobility Extraction Methods in AlGaN/GaN HEMTs

 
dc.contributor.authorPanzo, Eduardo Canga
dc.contributor.authorGraciano Junior, Nilton
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCano de Andrade, Maria Gloria
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2023-12-18T08:20:16Z
dc.date.available2023-12-14T17:35:41Z
dc.date.available2023-12-18T08:20:16Z
dc.date.issued2023
dc.description.wosFundingTextThe authors would like to thank the imec partner program in imec high-speed analog and RF devices and the ARF team for providing the samples. Thanks also to the Brazilian research-funding agency FAPESP (Process No: 2023/001237), CAPES, and CAADI (Coordenadoria de Acoes Afirmativas, Diversidade e Equidade) for supporting the development of this work.
dc.identifier.doi10.1109/SBMicro60499.2023.10302530
dc.identifier.eisbn979-8-3503-1945-3
dc.identifier.issn2832-420X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43254
dc.publisherIEEE
dc.source.conference37th Symposium on Microelectronics Technology and Devices (SBMicro)
dc.source.conferencedateAUG 28-SEP 01, 2023
dc.source.conferencelocationRio de Janeiro
dc.source.journalna
dc.source.numberofpages5
dc.subject.keywordsELECTRON-MOBILITY
dc.title

Mobility Extraction Methods in AlGaN/GaN HEMTs

dc.typeProceedings paper
dspace.entity.typePublication
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