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Radiation damages of Si avalanche photodiodes by 1-MeV fast neutrons and 220-MEV carbon particles

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dc.contributor.authorOhyama, Hidenori
dc.contributor.authorHakata, T.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.authorTakami, Y.
dc.contributor.authorHayama, J.
dc.contributor.authorTokuyama, J.
dc.contributor.authorShigaki, K.
dc.contributor.authorSunaga, H.
dc.contributor.authorMiyahara, K.
dc.contributor.authorHososhima, M.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-01T08:35:17Z
dc.date.available2021-10-01T08:35:17Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2820
dc.source.beginpage429
dc.source.conferenceSemiconductors for Room-Temperature Radiation Detector Applications II;
dc.source.conferencelocation
dc.source.endpage434
dc.title

Radiation damages of Si avalanche photodiodes by 1-MeV fast neutrons and 220-MEV carbon particles

dc.typeProceedings paper
dspace.entity.typePublication
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