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A new consistent RF- and noise model with special emphasis on impact ionization for dual-gate HFET in cascode configuration
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A new consistent RF- and noise model with special emphasis on impact ionization for dual-gate HFET in cascode configuration
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Date
1998
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Breder, T.
;
Reuter, R.
;
Daumann, W.
;
Schreurs, Dominique
;
van der Zanden, Koen
;
Brockerhoff, W.
;
Tegude, F. J.
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1944
since deposited on 2021-09-30
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last month
Acq. date: 2025-12-15
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Metrics
Views
1944
since deposited on 2021-09-30
2
last month
Acq. date: 2025-12-15
Citations