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Backscattering/channeling study of high dose rare-earth implants in Si

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dc.contributor.authorVantomme, Andre
dc.contributor.authorWu, Ming Fang
dc.contributor.authorWahl, U.
dc.contributor.authorPattyn, Hugo
dc.contributor.authorBender, Hugo
dc.contributor.authorLangouche, G.
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorPattyn, Hugo
dc.contributor.imecauthorBender, Hugo
dc.date.accessioned2021-09-30T09:59:15Z
dc.date.available2021-09-30T09:59:15Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2274
dc.source.conferenceInternational Conference on Ion Beam Analysis - IBA; July 1997; Lisboa, Portugal.
dc.source.conferencelocation
dc.title

Backscattering/channeling study of high dose rare-earth implants in Si

dc.typeOral presentation
dspace.entity.typePublication
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