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C atom distribution in Si:C and Si:C:P epitaxial layers studied using Raman spectroscopy

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dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorNuytten, Thomas
dc.contributor.authorLoo, Roger
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorNuytten, Thomas
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecNuytten, Thomas::0000-0002-5921-6928
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.date.accessioned2021-10-22T19:03:20Z
dc.date.available2021-10-22T19:03:20Z
dc.date.issued2015-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25212
dc.source.beginpage43
dc.source.conference9th International Conference on Silicon Epitaxy and Heterostructures - ICSI9
dc.source.conferencedate17/05/2015
dc.source.conferencelocationMontreal Canada
dc.source.endpage44
dc.title

C atom distribution in Si:C and Si:C:P epitaxial layers studied using Raman spectroscopy

dc.typeMeeting abstract
dspace.entity.typePublication
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