DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory

dc.contributor.author	Maccaronio, A.
dc.contributor.author	Crupi, F.
dc.contributor.author	Procel, L.M.
dc.contributor.author	Goux, Ludovic
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Trojman, L.
dc.contributor.author	Miranda, E.
dc.contributor.imecauthor	Goux, Ludovic
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Goux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-21T09:38:33Z
dc.date.available	2021-10-21T09:38:33Z
dc.date.issued	2013
dc.identifier.issn	0167-9317
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/22737
dc.source.beginpage	1
dc.source.endpage	5
dc.source.journal	Microelectronic Engineering
dc.source.volume	107
dc.title	DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
dc.type	Journal article
dspace.entity.type	Publication
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