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Direct comparison of Si/high-k and Si/SiO2 channels in advanced FD SOI MOSFETs

Date

2008
Proceedings Paper
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dc.contributor.authorPham-Nguyen, L.
dc.contributor.authorFenouillet-Beranger, C.
dc.contributor.authorVandooren, Anne
dc.contributor.authorWild, A.
dc.contributor.authorGhibaudo, G.
dc.contributor.authorCristoloveanu, S.
dc.contributor.imecauthorVandooren, Anne
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.date.accessioned2021-10-17T09:50:28Z
dc.date.available2021-10-17T09:50:28Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14313
dc.source.beginpage25
dc.source.conferenceIEEE International SOI Conference Proceedings
dc.source.conferencedate6/10/2008
dc.source.conferencelocationNew Paltz, NY USA
dc.source.endpage26
dc.title

Direct comparison of Si/high-k and Si/SiO2 channels in advanced FD SOI MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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