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The influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes
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The influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes
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Date
2018
Proceedings Paper
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40747.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bakeroot, Benoit
;
De Jaeger, Brice
;
Ronchi, Nicolo
;
Stoffels, Steve
;
Zhao, Ming
;
Decoutere, Stefaan
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1754
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Acq. date: 2026-01-09
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Metrics
Views
1754
since deposited on 2021-10-25
2
last month
Acq. date: 2026-01-09
Citations