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On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates

Date

2008
Journal article
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dc.contributor.authorMartens, Koen
dc.contributor.authorChui, Chi On
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorKuzum, Duygu
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorKrishnamohan, Tejas
dc.contributor.authorSaraswat, Krishna
dc.contributor.authorMaes, Herman
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T08:50:29Z
dc.date.available2021-10-17T08:50:29Z
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14128
dc.source.beginpage547
dc.source.endpage556
dc.source.issue2
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume55
dc.title

On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates

dc.typeJournal article
dspace.entity.typePublication
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