Publication:

TaN metal gate MOSFETs with agressively scaled HfO2 dielectrics

Date

2003
Proceedings Paper
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dc.contributor.authorLander, Rob
dc.contributor.authorSchram, Tom
dc.contributor.authorLujan, Guilherme
dc.contributor.authorHooker, Jacob
dc.contributor.authorVertommen, Johan
dc.contributor.authorLee, S.
dc.contributor.authorDeweerd, Wim
dc.contributor.authorBoullart, Werner
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCarter, Richard
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-15T05:17:47Z
dc.date.available2021-10-15T05:17:47Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7774
dc.source.beginpage367
dc.source.conferenceAdvanced Short-Time Thermal Processing for Si-based CMOS devices
dc.source.conferencedate27/04/2003
dc.source.conferencelocationParis France
dc.source.endpage374
dc.title

TaN metal gate MOSFETs with agressively scaled HfO2 dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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