Evidence of the prominent role of the time-under-melt parameter in the reset switching of phase-change line cells

dc.contributor.author	Goux, Ludovic
dc.contributor.author	Gille, Thomas
dc.contributor.author	Tio Castro, David
dc.contributor.author	Hurkx, Fred
dc.contributor.author	Lisoni, Judit
dc.contributor.author	Delhougne, Romain
dc.contributor.author	Gravesteijn, Dirk
dc.contributor.author	De Meyer, Kristin
dc.contributor.author	Attenborough, Karen
dc.contributor.author	Wouters, Dirk
dc.contributor.imecauthor	Goux, Ludovic
dc.contributor.imecauthor	Delhougne, Romain
dc.contributor.imecauthor	De Meyer, Kristin
dc.contributor.orcidimec	Goux, Ludovic::0000-0002-1276-2278
dc.date.accessioned	2021-10-17T07:21:59Z
dc.date.available	2021-10-17T07:21:59Z
dc.date.issued	2008
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/13796
dc.source.beginpage	37
dc.source.conference	Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design - NVSMW/ICMTD
dc.source.conferencedate	18/05/2008
dc.source.conferencelocation	Opio France
dc.source.endpage	38
dc.title	Evidence of the prominent role of the time-under-melt parameter in the reset switching of phase-change line cells
dc.type	Proceedings paper
dspace.entity.type	Publication
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