Publication:

Degradation of deep submicron partially depleted SOI CMOS transistors under MeV proton irradiation

Date

2003
Proceedings Paper
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorClaeys, Cor
dc.contributor.authorKokkoris, M.
dc.contributor.authorKossionides, E.
dc.contributor.authorFanourakis, G.
dc.contributor.authorMohammadzadeh, A.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.date.accessioned2021-10-15T06:43:09Z
dc.date.available2021-10-15T06:43:09Z
dc.date.embargo9999-12-31
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8155
dc.source.beginpage18
dc.source.conferenceProceedings of the 18th Symposium on Microelectronics Technology and Devices - SBMICRO
dc.source.conferencedate8/09/2003
dc.source.conferencelocationSao Paulo Brazil
dc.source.endpage27
dc.title

Degradation of deep submicron partially depleted SOI CMOS transistors under MeV proton irradiation

dc.typeProceedings paper
dspace.entity.typePublication
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