Publication:

Analytical model of thin-body InGaAs MOSFET low-field electron mobility for integration in TCAD models

Date

2015
Proceedings Paper
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dc.contributor.authorBetti Beneventi, G.
dc.contributor.authorReggiani, S.
dc.contributor.authorGnudi, A.
dc.contributor.authorGnani, E.
dc.contributor.authorAlian, AliReza
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Anda
dc.contributor.authorThean, Aaron
dc.contributor.authorBaccarani, G.
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T18:33:03Z
dc.date.available2021-10-22T18:33:03Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24988
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7063818
dc.source.beginpage241
dc.source.conferenceJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS
dc.source.conferencedate26/01/2015
dc.source.conferencelocationBologna Italy
dc.source.endpage244
dc.title

Analytical model of thin-body InGaAs MOSFET low-field electron mobility for integration in TCAD models

dc.typeProceedings paper
dspace.entity.typePublication
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