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Au-free ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

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dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorYou, Shuzhen
dc.contributor.authorWellekens, Dirk
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-22T01:28:09Z
dc.date.available2021-10-22T01:28:09Z
dc.date.issued2014
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23816
dc.identifier.urlhttp://iopscience.iop.org/1347-4065/53/4S/04EF01/4065/53/4S/04EF01/
dc.source.beginpage04EF01
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume53
dc.title

Au-free ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

dc.typeJournal article
dspace.entity.typePublication
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