A deep level study of high-temperature electron-irradiated n-type Cz silicon

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.author	Neimash, V.
dc.contributor.author	Kraitchinskii, A.
dc.contributor.author	Kras'ko, M.
dc.contributor.author	Tischenko, V.
dc.contributor.author	Voitovych, V.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-15T16:15:15Z
dc.date.available	2021-10-15T16:15:15Z
dc.date.embargo	9999-12-31
dc.date.issued	2004
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/9599
dc.source.beginpage	367
dc.source.conference	Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003
dc.source.conferencedate	21/09/2003
dc.source.conferencelocation	Berlin Germany
dc.source.endpage	372
dc.title	A deep level study of high-temperature electron-irradiated n-type Cz silicon
dc.type	Proceedings paper
dspace.entity.type	Publication
Files	Original bundle Name: 8147.pdf Size: 282.55 KB Format: Adobe Portable Document Format Download
Publication available in collections:	Conference contributions

Date