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III-nitrides for high power switching devices based on large diameter GaN-on-Si technology

Date

2009
Proceedings Paper
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dc.contributor.authorGermain, Marianne
dc.contributor.authorDerluyn, Joff
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDegroote, Stefan
dc.contributor.authorDas, Jo
dc.contributor.authorCheng, Kai
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-17T22:20:47Z
dc.date.available2021-10-17T22:20:47Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15341
dc.source.conferenceIEEE International Conference on IC Design & Technology
dc.source.conferencedate18/05/2009
dc.source.conferencelocationAustin, TX USA
dc.title

III-nitrides for high power switching devices based on large diameter GaN-on-Si technology

dc.typeProceedings paper
dspace.entity.typePublication
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