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Impact of the NW-TFET diameter on the efficiency and the intrinsic voltage gain from a conduction regime perspective

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dc.contributor.authorMendes Bordallo, Ciao Cesar
dc.contributor.authorSivieri, V.B.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAgopian, Paula G. A.
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-23T12:45:08Z
dc.date.available2021-10-23T12:45:08Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26997
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7467453
dc.source.beginpage2930
dc.source.endpage2935
dc.source.issue7
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume63
dc.title

Impact of the NW-TFET diameter on the efficiency and the intrinsic voltage gain from a conduction regime perspective

dc.typeJournal article
dspace.entity.typePublication
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