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Scaling of floating gate electrode for sub-40nm flash technologies

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dc.contributor.authorDe Vos, Joeri
dc.contributor.authorWellekens, Dirk
dc.contributor.authorDebusschere, Ingrid
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorVan Aerde, Steven
dc.contributor.authorFischer, Pamela
dc.contributor.authorZagwijn, Peter
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDebusschere, Ingrid
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorVan Aerde, Steven
dc.contributor.orcidimecDe Vos, Joeri::0000-0002-9332-9336
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-17T06:47:59Z
dc.date.available2021-10-17T06:47:59Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13625
dc.source.beginpage123
dc.source.conference38th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate15/09/2008
dc.source.conferencelocationEdingburgh UK
dc.source.endpage125
dc.title

Scaling of floating gate electrode for sub-40nm flash technologies

dc.typeProceedings paper
dspace.entity.typePublication
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