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Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic

Date

2017
Proceedings Paper
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dc.contributor.authorTorres, H
dc.contributor.authorMartino, Joao A.
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorAgopian, Paula
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-24T15:12:37Z
dc.date.available2021-10-24T15:12:37Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29596
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8112973/
dc.source.beginpage1
dc.source.conference32nd Symposium on Microelectronics Technology and Devices - SBMICRO
dc.source.conferencedate28/08/2017
dc.source.conferencelocationFortaleza Brazil
dc.source.endpage4
dc.title

Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic

dc.typeProceedings paper
dspace.entity.typePublication
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