Publication:

Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs

Date

2021
Journal article
https://doi.org/10.1016/j.sse.2021.108087
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorde Oliveira, Alberto Vinicius
dc.contributor.authorDer Agopian, Paula Ghedini
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorMertens, Hans
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorClaeys, Cor
dc.contributor.authorVeloso, Anabela
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.orcidextDer Agopian, Paula Ghedini::0000-0002-0886-7798
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2022-02-24T09:09:41Z
dc.date.available2022-02-24T09:09:41Z
dc.date.issued2021
dc.identifier.doi10.1016/j.sse.2021.108087
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39087
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage108087
dc.source.issuena
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages7
dc.source.volume184
dc.subject.keywordsIMPACT
dc.subject.keywordsMETAL
dc.subject.keywordsJUNCTIONLESS
dc.subject.keywordsLOGIC
dc.subject.keywordsFETS
dc.title

Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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