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Damage accumulation and dopant migration during shallow As and Sb implantation into Si

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dc.contributor.authorWerner, M.
dc.contributor.authorvan den Berg, J.A.
dc.contributor.authorArmour, D.G.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCollart, E.H.J.
dc.contributor.authorGoldberg, R.D.
dc.contributor.authorBailey, P.
dc.contributor.authorNoakes, T.C.Q.
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-15T17:52:35Z
dc.date.available2021-10-15T17:52:35Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9910
dc.source.beginpage67
dc.source.endpage74
dc.source.journalNuclear Instruments & Methods in Physics Research B
dc.source.volume216
dc.title

Damage accumulation and dopant migration during shallow As and Sb implantation into Si

dc.typeJournal article
dspace.entity.typePublication
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