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Effect of Si surface roughness on the current-voltage characteristics of ultra-thin gate oxides

Date

1998
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dc.contributor.authorHoussa, Michel
dc.contributor.authorNigam, Tanya
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-09-30T12:14:14Z
dc.date.available2021-09-30T12:14:14Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2643
dc.source.conference4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
dc.title

Effect of Si surface roughness on the current-voltage characteristics of ultra-thin gate oxides

dc.typeOral presentation
dspace.entity.typePublication
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