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Improvement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layer
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Improvement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layer
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Date
2005
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Derluyn, Joff
;
Van Daele, Benny
;
Boeykens, Steven
;
Cheng, Kai
;
Ruythooren, Wouter
;
Leys, Maarten
;
Germain, Marianne
;
Van Tendeloo, Gustaaf
;
Borghs, Gustaaf
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1958
since deposited on 2021-10-16
Acq. date: 2026-07-18
Citations
Statistics
Views
1958
since deposited on 2021-10-16
Acq. date: 2026-07-18
Citations