Publication:

Manufacturing of high aspect-ratio p-n junctions using vapor phase doping for application in multi-Resurf devices

Date

2002
Proceedings Paper
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dc.contributor.authorRochefort, Christelle
dc.contributor.authorVan Dalen, Rob
dc.contributor.authorDuhayon, Natasja
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorDuhayon, Natasja
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-14T22:56:00Z
dc.date.available2021-10-14T22:56:00Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6760
dc.source.beginpage237
dc.source.conferenceProceedings of the 14th International Symposium on Power Semiconductor Devices and ICs
dc.source.conferencedate4/06/2002
dc.source.conferencelocationSanta Fe, NM USA
dc.source.endpage240
dc.title

Manufacturing of high aspect-ratio p-n junctions using vapor phase doping for application in multi-Resurf devices

dc.typeProceedings paper
dspace.entity.typePublication
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