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An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices

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dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorGoubert, L.
dc.contributor.authorFiermans, L.
dc.contributor.authorLaflère, W. H.
dc.contributor.authorCardon, F.
dc.contributor.authorDe Dobbelaere, Peter
dc.contributor.authorVan Daele, P.
dc.date.accessioned2021-09-29T13:20:13Z
dc.date.available2021-09-29T13:20:13Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/951
dc.source.beginpage641
dc.source.conferenceMicroscopy of Semiconducting Materials 1995
dc.source.conferencedate20/03/1995
dc.source.conferencelocationOxford UK
dc.source.endpage644
dc.title

An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices

dc.typeProceedings paper
dspace.entity.typePublication
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