Publication:
Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0009-0005-0093-537X | |
| cris.virtualsource.department | 01941835-582a-4ad7-90a5-cc4d2250a185 | |
| cris.virtualsource.orcid | 01941835-582a-4ad7-90a5-cc4d2250a185 | |
| dc.contributor.author | Niu, Jingjie | |
| dc.contributor.author | Kim, Donggyu | |
| dc.contributor.author | Li, Jie | |
| dc.contributor.author | Lyu, Jiahui | |
| dc.contributor.author | Lee, Yoonmyung | |
| dc.contributor.author | Lee, Sungjoo | |
| dc.contributor.imecauthor | Li, Jie | |
| dc.date.accessioned | 2025-01-10T17:08:39Z | |
| dc.date.available | 2025-01-10T17:08:39Z | |
| dc.date.issued | 2025-JAN 2 | |
| dc.description.wosFundingText | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea and was funded by the Korean government (MSIP) (grant nos. RS-2023-00281048 and 2022R1A2C3003068). This study was supported by Samsung Electronics Co., Ltd. (IO201215-08197-01). | |
| dc.identifier.doi | 10.1021/acsnano.4c14062 | |
| dc.identifier.issn | 1936-0851 | |
| dc.identifier.pmid | MEDLINE:39746872 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45064 | |
| dc.publisher | AMER CHEMICAL SOC | |
| dc.source.journal | ACS NANO | |
| dc.source.numberofpages | 10 | |
| dc.subject.keywords | CONTENT-ADDRESSABLE MEMORY | |
| dc.subject.keywords | BOOLEAN LOGIC | |
| dc.subject.keywords | REALIZATION | |
| dc.subject.keywords | INPLANE | |
| dc.title | Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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