Publication:

Experimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel

Date

2014
Journal article
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dc.contributor.authorTang, Baojun
dc.contributor.authorZhang, Weidong
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorZhang, Jianfu
dc.contributor.authorDegraeve, Robin
dc.contributor.authorJi, Zhigang
dc.contributor.authorArreghini, Antonio
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-22T06:25:28Z
dc.date.available2021-10-22T06:25:28Z
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24597
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6782311
dc.source.beginpage1501
dc.source.endpage1507
dc.source.issue5
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume61
dc.title

Experimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel

dc.typeJournal article
dspace.entity.typePublication
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