Publication:

Nanoscale etching of In0.53Ga0.47As for advanced CMOS processing

Date

2014
Journal article
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dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorArnauts, Sophia
dc.contributor.authorCuypers, Daniel
dc.contributor.authorRip, Jens
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorKelly, John
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-22T07:09:35Z
dc.date.available2021-10-22T07:09:35Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24688
dc.identifier.urlhttp://jss.ecsdl.org/content/3/6/P179.full
dc.source.beginpageP179
dc.source.endpageP184
dc.source.issue6
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.volume3
dc.title

Nanoscale etching of In0.53Ga0.47As for advanced CMOS processing

dc.typeJournal article
dspace.entity.typePublication
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